Passivated contacts based on doped polysilicon are expected to be the key technology for more efficient mass production of silicon solar cells in the next few years, with global market share expected to grow nearly nine-fold to 35% by 2031. The excellent number of carrier-selective passivated contacts enables carrier extraction with low resistance without affecting surface passivation and has played an important role in recent advances in high-efficiency solar cells.

JinkoSolar Jie Yang and Australian National University Sieu Pheng Phang et al. report the application of phosphorus-doped polysilicon passivated contacts for large-area screen-printed n-type silicon solar cells.

Using an industrially feasible fabrication process, the champion cell efficiency independently measured by ISFH-CalTeC on a 163.75 × 163.75 mm solar cell is 24.79%. Applying detailed characterization and simulations to investigate the main losses and pathways to further improve state-of-the-art industrial high-efficiency solar cells, reveal that the front-side boron diffusion region accounts for approximately 63% of the electrical losses.